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Artigo de periodico
A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction (1997)
Nicolett, Aparecido Sirley; Martino, João Antonio
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley e MARTINO, João Antonio. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 5-8, 1997Tradução . . Acesso em: 15 maio 2024.
APA
Nicolett, A. S., & Martino, J. A. (1997). A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits, 5( 1), 5-8.
NLM
Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2024 maio 15 ]
Vancouver
Nicolett AS, Martino JA. A simple technique to reduce the influence of the series resistance on the BULK and SOI MOSFET parameter extraction. Journal of Solid-State Devices and Circuits. 1997 ;5( 1): 5-8.[citado 2024 maio 15 ]
Artigo de periodico
Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation (1997)
Nicolett, Aparecido Sirley; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
NICOLETT, Aparecido Sirley et al. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, v. 5, n. 1, p. 1-4, 1997Tradução . . Acesso em: 15 maio 2024.
APA
Nicolett, A. S., Martino, J. A., Simoen, E., & Claeys, C. (1997). Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits, 5( 1), 1-4.
NLM
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2024 maio 15 ]
Vancouver
Nicolett AS, Martino JA, Simoen E, Claeys C. Improved channel lenght and series resistance extraction for short-channel MOSFETs suffering from mobility degradation. Journal of Solid-State Devices and Circuits. 1997 ; 5( 1): 1-4.[citado 2024 maio 15 ]
Artigo de periodico
New empirical model for leakage drain current of soi mosfets valid from room to high temperatures (1996)
Bellodi, Marcello; Martino, João Antonio ; Flandre, Denis
Source: Journal of Solid-State Devices and Circuits. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
BELLODI, Marcello e MARTINO, João Antonio e FLANDRE, Denis. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, v. 4 , n. ja 1996, p. 7-10, 1996Tradução . . Acesso em: 15 maio 2024.
APA
Bellodi, M., Martino, J. A., & Flandre, D. (1996). New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits, 4 ( ja 1996), 7-10.
NLM
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2024 maio 15 ]
Vancouver
Bellodi M, Martino JA, Flandre D. New empirical model for leakage drain current of soi mosfets valid from room to high temperatures. Journal of Solid-State Devices and Circuits. 1996 ;4 ( ja 1996): 7-10.[citado 2024 maio 15 ]

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